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Si2302CDS-T1-GE3 N-Channel Logic-Level MOSFET (20V, 2.9A, SOT-23)

Si2302CDS-T1-GE3 N-Channel Logic-Level MOSFET (20V, 2.9A, SOT-23)

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Regular price 4,00 PLN
Regular price 4,00 PLN Sale price
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Si2302CDS-T1-GE3 N-Channel Logic-Level MOSFET (20V, 2.9A, SOT-23) RC-LIFE

Si2302CDS-T1-GE3 N-Channel Logic-Level MOSFET (20V, 2.9A, SOT-23)

Regular price 4,00 zł
Regular price 4,00 zł Sale price
SAVE Sold out

Bridge the gap between low-power microcontrollers and medium-power electronics with the Si2302CDS-T1-GE3 N-Channel MOSFET. When a standard 2N7002 transistor just isn't powerful enough for your project, this logic-level MOSFET is the perfect drop-in upgrade. Despite being housed in the exact same microscopic SOT-23 package, it boasts a significantly lower ON-resistance (~75 mOhms), allowing it to safely switch continuous loads of up to 2.9A without overheating.

Because it features a very low gate threshold voltage, it can be fully saturated (turned on) directly by the 3.3V or 5V GPIO pins of an ESP32, Arduino, or Raspberry Pi. This makes it the absolute best space-saving component for driving high-brightness LED strips, solenoid valves, micro-water pumps, and mechanical relays in your custom IoT devices and smart home projects. It requires virtually zero gate current to operate, keeping your processor safe and your circuit highly efficient.

Key Features:

  • Microcontroller Ready: True logic-level gate threshold allows direct control from 3.3V and 5V GPIO pins without dedicated driver ICs.

  • High Current in a Tiny Package: Handles an impressive 2.9A of continuous current, making it vastly superior to standard small-signal transistors.

  • Ultra-Low Resistance: The low 75 mΩ RDS(on) minimizes thermal dissipation, allowing you to switch medium loads without a heatsink.

  • Space-Saving SOT-23: The miniature surface-mount footprint is perfect for densely populated custom PCBs and miniaturized robotics.

Specifications:

  • Part Number: Si2302CDS-T1-GE3 (Common SMD code: A2SHB / A2s)

  • Transistor Type: N-Channel Enhancement Mode MOSFET

  • Max Drain-Source Voltage (Vds): 20V

  • Max Continuous Drain Current (Id): 2.9A

  • Static Drain-Source On-Resistance (RDS(on)): ~75 mΩ (at Vgs=4.5V)

  • Package Type: SOT-23 (TO-236AB, SMD/SMT)

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