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BC807-25LT3G PNP General Purpose Transistor (45V, 500mA, SOT-23)

BC807-25LT3G PNP General Purpose Transistor (45V, 500mA, SOT-23)

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BC807-25LT3G PNP General Purpose Transistor (45V, 500mA, SOT-23) RC-LIFE

BC807-25LT3G PNP General Purpose Transistor (45V, 500mA, SOT-23)

Regular price 1,00 zł
Regular price 1,00 zł Sale price
SAVE Sold out

Take full control over your circuit's power distribution with the BC807-25LT3G PNP bipolar junction transistor (BJT). While NPN transistors are great for switching ground (low-side), there are many situations where you need to switch the positive power rail (high-side) to completely cut off power to external sensors, displays, or RF modules to save battery. As the perfect complementary pair to the ubiquitous BC817, this tiny PNP transistor is the industry-standard workhorse for high-side switching in custom electronics.

Capable of handling a robust -500mA of continuous collector current and with a breakdown voltage of -45V, it easily handles 12V and 24V loads without breaking a sweat. Whether you are designing power-saving sleep circuits for IoT devices, building audio amplifier stages, or controlling power to custom drone peripherals, the BC807 delivers reliable, efficient performance. Packaged in a microscopic SOT-23 footprint, it is a must-have building block for any maker’s surface-mount component stash.

Key Features:

  • High-Side Switching: The ideal PNP transistor for switching positive voltage rails, allowing you to fully power down modules and sensors to save battery life.

  • High Current Capacity: Safely switches up to 500mA of continuous current, making it perfect for driving heavy loads like relays, LEDs, and small motors.

  • Wide Voltage Tolerance: A robust 45V rating makes it completely safe to use in standard 12V and 24V DC systems.

  • Perfect Complement: Pairs flawlessly with the BC817 NPN transistor for designing push-pull audio amplifiers or H-bridge motor drivers.

Specifications:

  • Part Number: BC807-25LT3G

  • Transistor Type: PNP Bipolar Junction Transistor (BJT)

  • Max Collector-Emitter Voltage (Vceo): -45V

  • Max Collector Current (Ic): -500mA

  • DC Current Gain (hFE): 160 to 400 (Band 25)

  • Package Type: SOT-23 (SMD/SMT)

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