PJQ5528 N-Channel Power MOSFET (30V, 6 mΩ, 11nC, DFN5060)

Optimize your power delivery and high-frequency switching circuits with the PJQ5528 N-Channel MOSFET. When designing custom Electronic Speed Controllers (ESCs) for FPV drones, synchronous DC-DC buck converters, or Battery Management Systems (BMS), engineers face a constant trade-off between conduction losses (resistance) and switching losses (gate charge). This advanced silicon perfectly balances both. With a low ON-resistance of just 6 mOhms and an exceptionally low gate charge of 11nC, it enables blazing-fast switching frequencies while minimizing heat generation under heavy continuous loads.

Rated for 30V, it provides an excellent safety margin for 3S and 4S LiPo battery systems, as well as standard 12V and 24V power distribution networks. Housed in a thermally enhanced DFN5060 (5x6 mm) surface-mount package with a massive exposed metal pad, it pulls heat directly into your PCB's copper layers. This eliminates the need for bulky external aluminum heatsinks, saving crucial weight and space in compact robotics and aerospace DIY applications.

Key Features:

• High-Speed Switching: The exceptionally low 11nC gate charge allows for high-frequency PWM control, drastically reducing dynamic power losses in motor drivers.

• Ultra-Low Resistance: Only 6 mΩ RDS(on) minimizes thermal dissipation, keeping your power distribution boards cool under heavy amp draw.

• 30V Voltage Rating: Provides a reliable safety buffer for managing high-current 12V/24V DC systems and fully charged 3S/4S LiPo packs.

• Thermally Optimized: The industry-standard DFN5060 footprint offers superior heat transfer directly into the PCB, perfect for densely packed electronics.

Specifications:

• Part Number: PJQ5528_R2_00201

• Transistor Type: N-Channel Power MOSFET

• Max Drain-Source Voltage (Vds): 30V

• Static Drain-Source On-Resistance (RDS(on)): 6 mΩ (Typical)

• Total Gate Charge (Qg): 11 nC (Typical)

• Package Type: DFN5060-8 (5x6 mm, SMD/SMT)