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SQJQ130EL-T1_GE3 Automotive N-Channel Power MOSFET (30V, 0.52 mΩ, PowerPAK 8x8L)

SQJQ130EL-T1_GE3 Automotive N-Channel Power MOSFET (30V, 0.52 mΩ, PowerPAK 8x8L)

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Regular price 19,00 PLN
Regular price 19,00 PLN Sale price
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SQJQ130EL-T1_GE3 Automotive N-Channel Power MOSFET (30V, 0.52 mΩ, PowerPAK 8x8L) RC-LIFE

SQJQ130EL-T1_GE3 Automotive N-Channel Power MOSFET (30V, 0.52 mΩ, PowerPAK 8x8L)

Regular price 19,00 zł
Regular price 19,00 zł Sale price
SAVE Sold out

Conquer the most extreme high-current applications with the SQJQ130EL-T1_GE3 automotive-grade N-Channel MOSFET by Vishay. When designing professional solid-state relays, heavy-duty battery isolators, or ultra-high-power Electronic Speed Controllers (ESCs) for commercial UAVs, thermal management is everything. This flagship MOSFET boasts a mind-blowing ON-resistance (RDS(on)) of just 0.52 mOhms. This allows hundreds of amps of continuous current to pass through with virtually zero voltage drop and minimal heat generation, completely eliminating the need for massive heatsinks.

Because this silicon die is so massive, it features a high gate charge (Qg) of 310nC. This means it cannot be driven directly by a microcontroller; it requires a dedicated, high-current gate driver IC to switch efficiently. Fully AEC-Q101 qualified for automotive applications, it is built to survive brutal environments and extreme temperature fluctuations. Housed in a thermally optimized PowerPAK 8x8L surface-mount package, it is the ultimate heavy-weight semiconductor for 12V and 24V (up to 6S LiPo) power distribution networks.

Key Features:

  • Near-Zero Resistance: The phenomenal 0.52 mΩ RDS(on) guarantees maximum efficiency and virtually eliminates thermal throttling under extreme continuous loads.

  • Automotive Grade (AEC-Q101): Strictly tested and certified to withstand the harsh vibrations, temperatures, and electrical noise of industrial and automotive environments.

  • Massive Power Handling: Designed for top-tier power distribution, ideal for smart BMS boards, heavy winch controllers, and professional robotics.

  • PowerPAK 8x8L Package: An advanced footprint that offers vastly superior thermal dissipation compared to traditional D2PAK housings while saving PCB space.

Specifications:

  • Part Number: SQJQ130EL-T1_GE3

  • Transistor Type: N-Channel Power MOSFET

  • Max Drain-Source Voltage (Vds): 30V

  • Static Drain-Source On-Resistance (RDS(on)): 0.52 mΩ

  • Total Gate Charge (Qg): 310 nC (Requires a dedicated gate driver)

  • Package Type: PowerPAK® 8x8L (SMD/SMT)

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