BSC059N04LS6ATMA OptiMOS™ 6 N-Channel Power MOSFET (40V, 5.9 mΩ, SuperSO8)

Achieve peak efficiency in your high-frequency switching circuits with the BSC059N04LS6ATMA N-Channel MOSFET by Infineon. When designing brushless motor controllers (ESCs) for FPV drones or synchronous buck converters, you are constantly battling two types of power loss: conduction (resistance) and switching (gate charge). This advanced OptiMOS™ 6 silicon beautifully balances both. With a remarkably low gate charge (Qg) of just 9.4nC and a low 5.9 mOhm RDS(on), it allows for blazing-fast switching frequencies with minimal power loss, translating to longer flight times and drastically cooler operating temperatures.

Rated for 40V, this MOSFET provides a comfortable safety margin for the inductive voltage spikes commonly seen in 4S and 6S LiPo power systems. Housed in the industry-standard TDSON-8 (SuperSO8) 5x6mm package, it features a large exposed metal pad on the bottom, ensuring excellent thermal transfer to your PCB. Whether you are repairing premium 4-in-1 drone ESCs or designing custom high-efficiency power distribution networks, the BSC059N04LS6ATMA offers top-tier German engineering in a compact footprint.

Key Features:

• High-Frequency Champion: The incredibly low 9.4nC gate charge enables ultra-fast switching speeds, minimizing dynamic losses in PWM motor controllers.

• 6S LiPo Ready: The 40V drain-source rating makes it highly resilient against back-EMF and voltage spikes in aggressive 4S to 6S power setups.

• OptiMOS™ 6 Technology: Infineon's latest silicon architecture delivers a best-in-class Figure of Merit (RDS(on) x Qg) for uncompromising efficiency.

• SuperSO8 Package: The 5x6mm TDSON-8 footprint handles high continuous currents while offering exceptional heat dissipation into the copper layers of your PCB.

Specifications:

• Part Number: BSC059N04LS6ATMA

• Transistor Type: N-Channel Power MOSFET (OptiMOS™ 6)

• Max Drain-Source Voltage (Vds): 40V

• Static Drain-Source On-Resistance (RDS(on)): 5.9 mΩ (Max)

• Total Gate Charge (Qg): 9.4 nC (Typical)

• Package Type: TDSON-8 / SuperSO8 (5x6 mm, SMD)